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vishay siliconix SIA814DJ new product document number: 68672 s-81176-rev. a, 26-may-08 www.vishay.com 1 n-channel 30-v (d-s) mosfet with trench schottky diode features ? halogen-free ? little foot ? plus schottky power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance - thin 0.75 mm profile applications ? dc/dc converter for portable devices ? load switch for portable devices product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 30 0.061 at v gs = 10 v 4.5 3.2 nc 0.072 at v gs = 4.5 v 4.5 0.110 at v gs = 2.5 v 4.5 schottky product summary v ka (v) v f (v) diode forward voltage i f (a) a 30 0.56 at 1 a 2 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage (mosfet) v ds 30 v reverse voltage (schottky) v ka 30 gate-source voltage (mosfet) v gs 12 continuous drain current (t j = 150 c) (mosfet) t c = 25 c i d 4.5 a a t c = 70 c 4.5 a t a = 25 c 4.3 b, c t a = 70 c 3.4 b, c pulsed drain current (mosfet) i dm 15 continuous source-drain diode current (mosfet diode conduction) t c = 25 c i s 4.5 a t a = 25 c 1.6 b, c average forward current (schottky) i f 2 b pulsed forward current (schottky) i fm 3 maximum power dissipation (mosfet) t c = 25 c p d 6.5 w t c = 70 c 5 t a = 25 c 1.9 b, c t a = 70 c 1.2 b, c maximum power dissi pation (schottky) t c = 25 c 6.8 t c = 70 c 4.3 t a = 25 c 1.6 b, c t a = 70 c 1.0 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 markin g code x x x g b x lot tracea b ility a n d d a t e code part # code k a n -channel mosfet g d s a k g s n c d 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual k d 0.75 mm orderin g information: sia 8 14dj-t1-ge3 (lead (p b )-free and halogen-free) rohs compliant
www.vishay.com 2 document number: 68672 s-81176-rev. a, 26-may-08 vishay siliconix SIA814DJ new product notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( h ttp://www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a sol der fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. f. maximum under steady stat e conditions is 110 c/w. g. maximum under steady stat e conditions is 110 c/w. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient (mosfet) b, f t 5 s r thja 52 65 c/w maximum junction-to-case (drain) (mosfet) steady state r thjc 12.5 16 maximum junction-to-ambient (schottky) b, g t 5 s r thja 62 76 maximum junction-to-case (drain) (schottky) steady state r thjc 15 18.5 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 27 mv/c v gs(th) temperature coefficient v gs(th) /t j - 3.7 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.5 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 15 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 3.3 a 0.050 0.061 v gs = 4.5 v, i d = 3.1 a 0.059 0.072 v gs = 2.5 v, i d = 0.9 a 0.090 0.110 forward transconductance a g fs v ds = 15 v, i d = 3.3 a 9s dynamic b input capacitance c iss v ds = 10 v, v gs = 0 v, f = 1 mhz 340 pf output capacitance c oss 45 reverse transfer capacitance c rss 25 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 4.3 a 711 nc v ds = 15 v, v gs = 4.5 v, i d = 4.3 a 3.2 5 gate-source charge q gs 0.9 gate-drain charge q gd 0.8 gate resistance r g f = 1 mhz 2 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 4.3 i d ? 3.5 a, v gen = 4.5 v, r g = 1 10 15 ns rise time t r 10 15 turn-off delaytime t d(off) 15 25 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 4.3 i d ? 3.5 a, v gen = 10 v, r g = 1 510 rise time t r 12 20 turn-off delaytime t d(off) 15 25 fall time t f 10 15
document number: 68672 s-81176-rev. a, 26-may-08 www.vishay.com 3 vishay siliconix SIA814DJ new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 4.5 a pulse diode forward current i sm 15 body diode voltage v sd i s = 3.5 a, v gs = 0 v 0.8 1.2 v body diode reverse recovery time t rr i f = 3.5 a, di/dt = 100 a/s, t j = 25 c 12 20 ns body diode reverse recovery charge q rr 615nc reverse recovery fall time t a 8 ns reverse recovery rise time t b 4 schottky specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit forward voltage drop v f i f = 0.5 a 0.37 0.45 v i f = 0.5 a, t j = 125 c 0.31 0.37 i f = 1 a 0.46 0.56 i f = 1 a, t j = 125 c 0.41 0.50 maximum reverse leakage current i rm v r = 30 v 0.025 0.1 ma v r = 30 v, t j = 85 c 0.6 6.00 junction capacitance c t v r = 15 v 35 pf
www.vishay.com 4 document number: 68672 s-81176-rev. a, 26-may-08 vishay siliconix SIA814DJ new product mosfet typical characteristics t a = 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10thr u 3 v v gs =1 v v gs =2 v 0.030 0.055 0.0 8 0 0.105 0.130 0.155 0 3 6 9 12 15 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =4.5 v v gs =2.5 v v gs =10 v i d =4.3a 0 2 4 6 8 10 0246 8 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =15 v v ds =24 v transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c c rss 0 100 200 300 400 500 0102030 c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =3.3a v gs =10 v ,4.5 v v gs =2.5 v
document number: 68672 s-81176-rev. a, 26-may-08 www.vishay.com 5 vishay siliconix SIA814DJ new product mosfet typical characteristics t a = 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c 10 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 100 t j = 25 c 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.00 0.05 0.10 0.15 0.20 0246 8 10 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d =3.3a 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse 1ms 10 ms 100 ms 1s,10s dc limited b yr ds(on) * b v dss limited 100 s
www.vishay.com 6 document number: 68672 s-81176-rev. a, 26-may-08 vishay siliconix SIA814DJ new product mosfet typical characteristics t a = 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 10 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
vishay siliconix SIA814DJ document number: 68672 s-81176-rev. a, 26-may-08 www.vishay.com 7 new product mosfet typical characteristics t a = 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
www.vishay.com 8 document number: 68672 s-81176-rev. a, 26-may-08 vishay siliconix SIA814DJ new product schottky typical characteristics t a = 25 c, unless otherwise noted reverse current vs. junction temperature 10 -5 10 -4 10 -3 10 -2 10 -1 1 - 50 - 25 0 25 50 t j - j u nction temperat u re (c) i r - re v erse c u rrent (ma) 150 125 100 75 100 10 v r = 30 v v r = 10 v forward voltage drop 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j = 150 c 1 v f -for w ard v oltage drop ( v ) - for w ard c u rrent (a) i f 0.1 10 t j = 25 c capacitance 0 50 100 150 200 250 0 5 10 15 20 25 30 v ds - drain-to-so u rce v oltage ( v ) - j u nction capacitance (pf) c t
vishay siliconix SIA814DJ document number: 68672 s-81176-rev. a, 26-may-08 www.vishay.com 9 new product schottky typical characteristics t a = 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68672. normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 10 -4 100 0.2 0.1 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 8 5 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.05 0.02 single p u lse normalized thermal transient impedance, junction-to-case d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 1 single p u lse 0.05 0.02 0.1 0.2 10 -3 10 -2 10 -1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix www.vishay.com document number: 70487 12 revision: 21-jan-08 application note recommended pad layout for powerpak ? sc70-6l dual 1 2.500 (0.098) 0.350 (0.014) 2.275 (0.011) 0.613 (0.024) 0.300 (0.012) 0.325 (0.013) 0.950 (0.037) 0.475 (0.019) 2.500 (0.098) 0.275 (0.011) 0.160 (0.006) 1.600 (0.063) dimensions in mm/(inches) 0.650 (0.026) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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